Model/Brand/Package
Category/Description
Inventory
Price
Data
-
![]()
Category: transistorDescription: 氮化镓对SiC耗尽型晶体管技术内部匹配 GaN on SiC Depletion-Mode Transistor Technology Internally Matched3427 -
![]()
Category: transistorDescription: 氮化镓对SiC耗尽型晶体管技术内部匹配 GaN on SiC Depletion-Mode Transistor Technology Internally Matched5196 -
![]()
Category: transistorDescription: 氮化镓HEMT脉冲功率晶体管2.7 - 3.1 GHz的峰值30W ， 500US脉冲，占空比为10％ GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle9545 -
![]()
Category: transistorDescription: 250V DC-1kHz (Standard) Single IGBT in a Dual INT-A-Pak package8439 -
![]()
Category: transistorDescription: 250V DC-1kHz (Standard) Single IGBT in a Dual INT-A-Pak package3950 -
![]()
Category: transistorDescription: 600V UltraFast 10-30kHz Half-Bridge IGBT in a INT-A-Pak package8960 -
![]()
Category: transistorDescription: 1200V UltraFast 10-30kHz Half-Bridge IGBT in a Dual INT-A-Pak package3117 -
![]()
Category: transistorDescription: Trans MOSFET N-CH 65V 0.25A/1A 16Pin HTSSOP94531+$261.533010+$254.710450+$249.4797100+$247.6604200+$246.2959500+$244.47651000+$243.33942000+$242.2023 -
![]()
Category: transistorDescription: 1200V UltraFast 10-30kHz Half-Bridge IGBT in a INT-A-Pak package1273 -
![]()
Category: transistorDescription: 600V UltraFast 10-30kHz Half-Bridge IGBT in a Dual INT-A-Pak packagee6740 -
![]()
Category: transistorDescription: 600V UltraFast 10-30kHz Half-Bridge IGBT in a INT-A-Pak package3253 -
![]()
Category: transistorDescription: 1200V UltraFast 10-30kHz Half-Bridge IGBT in a Dual INT-A-Pak package5343 -
![]()
Category: transistorDescription: Trans JFET N-CH 4V 60mA 4Pin Thin-Type Super Mini-Mold478810+$7.2240100+$6.8628500+$6.62201000+$6.61002000+$6.56185000+$6.50167500+$6.453410000+$6.4294
